Changjiang Storage Launches the Fourth Generation Flash Memory Chip, Stacking 232 Layers Compared to International First tier Manufacturers

According to insiders, the fourth generation products of Yangtze River Storage have reached 232 layers, which is comparable to international top tier manufacturers.
Changjiang Storage stated that compared to the previous generation products, the X3-9070 has higher storage density, faster I/O speed, and adopts a 6-plane design, which improves performance while reducing power consumption, further unleashing the potential of system level products.
It is reported that the new product achieves an I/O transfer rate of up to 2400MT/s in terms of performance, which complies with the ONFI5.0 specification; Compared to the previous generation of Yangtze River storage products, it achieved a 50% performance improvement; Thanks to the architecture innovation of Crystal Stack 3.0 in terms of density, the X3-9070 has become the highest density flash particle product in the history of Yangtze River Storage, capable of achieving 1Tb of storage capacity in smaller single chips; In terms of improving the system level product experience, thanks to the innovative 6-plane design, the X3-9070 improves its performance by more than 50% compared with the traditional 4-plane, while reducing its power consumption by 25% and significantly improving its energy efficiency ratio, which can bring more attractive Total cost of ownership (TCO) to end users.
Chen Yi, Executive Vice President of Changjiang Storage, stated: X3-9070 flash memory particles have excellent performance and extremely high storage density, which can be quickly and efficiently applied in mainstream commercial scenarios. Faced with the new demands and challenges brought by the booming development of new technologies such as 5G, cloud computing, Internet of Things, autonomous driving, artificial intelligence, etc., Changjiang Storage will always take crystal stacks as the starting point, continuously develop more high-quality flash memory products, collaborate with upstream and downstream storage partners, and use crystal stacks as the storage industry Empowerment
Changjiang Storage launched the Xstacking architecture technology in 2018, experiencing iterative development from 1.0 to 3.0. Changjiang Storage has accumulated rich experience in the field of 3D heterogeneous integration, and has successfully created multiple Changjiang storage system solution products based on the Xstacking technology, including SATA III, PCIe Gen3, Gen4 solid-state drives, as well as embedded storage products such as eMMC and UFS for mobile communication and other embedded applications.
Global storage giants have recently launched new products with over 200 layers. Recently, Micron officially announced the launch of 232 layer TLC flash memory particles, claiming that they are the industry's highest density and smallest size TLC flash memory particles, with better energy efficiency compared to the previous generation and can provide users with a better performance experience.
On August 3rd, SK Hynix of South Korea also announced to the public that it has developed 238 layers of NAND flash memory products and is expected to ship samples to customers in the near future. It is expected that the company will launch 238 layers of 512Gb 4D NAND products on a large scale in the first half of 2023. Compared to 176 layers of NAND products, the productivity/performance of the new NAND has increased by 37%.
Changjiang Storage Technology Co., Ltd. was established in July 2016, headquartered in Wuhan. It is an IDM integrated circuit enterprise that focuses on the integration of 3D NAND flash memory design and manufacturing, and also provides complete memory solutions.
(This article is from Pengpai News. For more original information, please download the "Pengpai News" app.)